Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
81A (Tc)
Power Dissipation (Max)
333W (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
8-PowerSFN
Drain to Source Voltage (Vdss)
750 V
Supplier Device Package
TOLL
Vgs(th) (Max) @ Id
2.5V @ 60mA
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs
174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
4604 pF @ 500 V