Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-247-4L
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
18V
Power Dissipation (Max)
555W (Tc)
Current - Continuous Drain (Id) @ 25°C
136A (Tc)
Drain to Source Voltage (Vdss)
750 V
Rds On (Max) @ Id, Vgs
20mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
2.5V @ 100mA
Gate Charge (Qg) (Max) @ Vgs
329 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
7252 pF @ 500 V